80812 tkim/o2203 tsim ta-100140 no.7363-1/6 http://onsemi.com semiconductor components industries, llc, 2013 august, 2013 30C02CH bipolar transistor 30v, 0.7a, low v ce ( sat ) npn single cph3 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. applications ? low-frequency ampli er, high-speed switching, small motor drive features ? large current capacity ? low collector-to-emitter saturation voltage (resistance) r ce (sat) typ.=330m [i c =0.7a, i b =35ma] ? ultrasmall package facilitates miniaturization in end products ? small on-resistance (ron) speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo 40 v collector-to-emitter voltage v ceo 30 v emitter-to-base voltage v ebo 5v collector current i c 700 ma collector current (pulse) i cp 1.4 a collector dissipation p c mounted on a ceramic board (600mm 2 0.8mm) 700 mw junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7015a-003 ordering number : en7363a product & package information ? package : cph3 ? jeita, jedec : sc-59, to-236, sot-23 ? minimum packing quantity : 3,000 pcs./reel packing type: tl marking electrical connection 3 2 1 cl lot no. tl 1 : base 2 : emitter 3 : collecto r cph3 2.9 0.05 0.4 2.8 1.6 0.2 0.6 0.6 0.9 0.2 0.15 2 1 3 0.95 30C02CH-tl-e
30C02CH no.7363-2/6 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =30v, i e =0a 100 na emitter cutoff current i ebo v eb =4v, i c =0a 100 na dc current gain h fe v ce =2v, i c =50ma 300 800 gain-bandwidth product f t v ce =10v, i c =50ma 540 mhz output capacitance cob v cb =10v, f=1mhz 3.3 pf collector-to-emitter saturation voltage v ce (sat) i c =200ma, i b =10ma 85 190 mv base-to-emitter saturation voltage v be (sat) i c =200ma, i b =10ma 0.9 1.2 v collector-to-base breakdown voltage v (br)cbo i c =10 a, i e =0a 40 v collector-to-emitter breakdown voltage v (br)ceo i c =1ma, r be = 30 v emitter-to-base breakdown voltage v (br)ebo i e =10 a, i c =0a 5 v turn-on time t on see speci ed test circuit. 35 ns storage time t stg 255 ns fall time t f 40 ns switching time test circuit ordering information device package shipping memo 30C02CH-tl-e cph3 3,000pcs./reel pb free v r r b v cc =12v v be = --5v + + 50 input outpu t r l 220 f 470 f pw=20 s i b1 d.c. 1% i b2 i c =20i b1 = --20i b2 =300ma 0 0 500 400 300 700 600 200 200 100 0 300 400 200 800 700 600 500 100 500 1000 800 900 100 300 400 600 700 i c -- v ce it05082 0 0.2 0.4 0.6 0.8 1.0 i c -- v be it05083 i b =0 200 a 400 a 1ma 2ma 3ma 5ma 7ma 10ma 50ma 15ma 30ma 20ma ta=75 c --25 c 25 c v ce =2v collector-to-emitter voltage, v ce -- mv collector current, i c -- ma base-to-emitter voltage, v be -- v collector current, i c -- ma
30C02CH no.7363-3/6 it05089 f t -- i c 100 1000 7 3 5 2 10 1.0 100 23 57 23 57 1000 23 57 v ce =10v cob -- v cb it05088 2 10 1.0 7 3 5 1.0 10 23 5 23 5 7 f=1mhz v ce (sat) -- i c v be (sat) -- i c it05086 it05087 10 100 1000 7 5 3 2 7 5 3 2 1.0 23 5 10 100 1000 7 23 5 7 23 5 7 1.0 0.1 10 3 2 5 7 3 2 5 7 1.0 23 5 10 100 1000 7 23 5 7 23 5 7 i c / i b =50 i c / i b =20 25 c --25 c ta=75 c 75 c ta=--25 c 25 c collector current, i c -- ma output capacitance, cob -- pf collector-to-base voltage, v cb -- v gain-bandwidth product, f t -- mhz collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- ma collector current, i c -- ma base-to-emitter saturation voltage, v be (sat) -- v p c -- ta it05091 0 800 600 700 500 300 400 100 200 0 20 40 60 80 100 120 140 160 mounted on a ceramic board(600mm 2 ? 0.8mm) collector dissipation, p c -- mw ambient temperature, ta -- c base current, i b -- ma ron -- i b on resistance, ron -- f=1mhz 0.1 0.1 it06793 10 7 5 3 2 7 5 3 2 1.0 3 2 57 3 2 57 1.0 10 out in 1k 1k i b 1.0 10 100 1000 3 2 57 3 2 57 3 2 57 1000 100 2 3 5 7 h fe -- i c it05084 v ce (sat) -- i c it05085 ta=75 c --25 c 25 c v ce =2v 2 3 5 7 2 3 5 7 10 1.0 100 2 3 5 7 1000 1.0 23 5 10 100 1000 7 23 5 7 23 5 7 25 c -- 2 5 c ta=75 c i c / i b =20 collector current, i c -- ma dc current gain, h fe collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- mv
30C02CH no.7363-4/6 embossed taping speci cation 30C02CH-tl-e
30C02CH no.7363-5/6 outline drawing land pattern example 30C02CH-tl-e mass (g) unit 0.013 * for reference mm unit: mm 0.6 2.4 0.95 0.95 1.4
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